CGD65A055SH2

H2 series 650 V / 55 mΩ GaN HEMT with ICeGaN® Gate, Current Sense and NL³ Circuit

Introducing the CGD65A055SH2, an enhancement mode GaN-on-silicon power transistor that capitalizes on the unique material properties of GaN to deliver high current, high breakdown voltage, and high switching frequency for a wide range of electronics applications.

Featuring CGD's ICeGaN® gate technology, the CGD65A055SH2 offers compatibility with almost all gate drivers and controller chips. The integrated current sense function eliminates the need for a separate current sense resistor in series with the source, reducing efficiency losses. As a result, the device can be directly soldered to the large copper area of the ground plane, enhancing thermal performance and simplifying thermal design.

The H2 series ICeGaN® also incorporates an advanced NL³ Circuit, leading to record low power losses at No Load and Light Load operations.

Packaged in a DFN 8x8 SMD, the CGD65A055SH2 supports high-frequency operation while ensuring exceptional thermal performance.

Applications:

• PSUs, Industrial SMPS and inverters
• AC/DC and DC/DC converters
• AC inverters
• Server power and data centres
• Telecom rectifiers
• Gaming PSUs
• PC power
• LED drivers
• High power ClassD Audio Amplifiers
• General purpose SMPS
• PV inverters

Topologies:

• Totem pole and single-switch PFC
• Quasi-resonant flyback and Active Clamp flyback
• LLC, PSFB DC/DC converters at high frequency